Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• strain, can be described by the following formula: When the strain ε is small, we can formulate: where X is the tunneling barrier height-dependent function. Figure 2b shows the good linearity between measured resistance and strain; the curves fit quite well to the analytical solution. When the helical

Apparent tunneling barrier height and local work function of atomic arrays

• Neda Noei,
• Alexander Weismann and
• Richard Berndt

Beilstein J. Nanotechnol. 2018, 9, 3048–3052, doi:10.3762/bjnano.9.283

• Neda Noei Alexander Weismann Richard Berndt Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany 10.3762/bjnano.9.283 Abstract Spatially resolved measurements of the apparent tunneling barrier height Φapp in scanning tunneling microscopy

• filament and, consequently, on the local surface structure. Keywords: scanning tunneling microscopy; tunneling barrier height; work function; Findings The work function of a metal surface [1], the work required at temperature T = 0 K to move an electron from the metal to infinity, is relevant for, e.g

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

•  4. The dependence of the transition voltage on is clearly revealed from the graph, demonstrating that Vt cannot be an estimate of the tunneling barrier height. Even if the Fowler–Nordheim plot of the device shown in Figure 4a feature a symmetric transition voltage with respect to the bias

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• = 0.3, which can be explained by the effect of the tunneling barrier height on the device subthreshold behavior. At a Ge mole fraction of 0.6, a good trade-off between derived current capability and subthreshold behavior is obtained, with an ION/IOFF ratio value of 115 dB and a swing factor value of 42

• barrier height at the source–channel junction decreases and a higher tunneling current can be generated when the band alignment at the junction is satisfied. In addition, Figure 4 shows the complex subthreshold behavior. The Ge mole fraction induces a highly non-linear behavior of the swing factor as it

• attributed to the enhanced tunneling current resulting from the change of the tunneling barrier with increasing Ge content. Figure 4b compares the band diagrams of the DG-HJ-JL TFET design and the conventional structure with uniform Si channel. Figure 4b reveals that by introducing Si1−xGex, the tunneling

Closed-loop conductance scanning tunneling spectroscopy: demonstrating the equivalence to the open-loop alternative

• Chris Hellenthal,
• Kai Sotthewes,
• Martin H. Siekman,
• E. Stefan Kooij and
• Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2015, 6, 1116–1124, doi:10.3762/bjnano.6.113

• electrons has also been determined through the use of tunneling measurements [26]. Another active area of research deals with the interfaces between the molecule and the metal contacts making up the junction [27]. In this article, the effective tunneling barrier height is determined through the use of

• Coombs et al. [28], which showed that the effect of an image charge on the apparent tunneling barrier height is not readily extracted from I(z) data. While the exact origin of γ is unclear, it is undeniable that its inclusion increases both the quality of the fits and the accuracy of the obtained values

• . Conclusion The conductances obtained from I(z) and z(V) spectroscopy can both be used to get a good indication of the effective tunneling barrier height when plotted logarithmically as a function of the tip–sample separation. This means that the determination of the (local) work function of a material can

Deconvolution of the density of states of tip and sample through constant-current tunneling spectroscopy

• Holger Pfeifer,
• Berndt Koslowski and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 607–617, doi:10.3762/bjnano.2.64

• “experimental sample DOS”, ρSe. The tunneling barrier height was determined from a separate I–z measurement at low bias at the same spot as the ∂VI–V curves, and a value of φ = 4.1 eV was extracted. The coefficients β and γ in the TPF (Equation 2) were set to β = 2 and γ = 1 for negative energy and γ = 1.11 for